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1 C3M0075120K silicon carbide power mosfet c3m tm mosfet technology n-channel enhancement mode features ? c3m tm sic mosfet technology ? optimized package with separate driver source pin ? 8mm of creepage distance between drain and source ? high blocking voltage with low on-resistance ? high-speed switching with low capacitances ? fast intrinsic diode with low reverse recovery (q rr ) ? halogen free, rohs compliant benefts ? reduce switching losses and minimize gate ringing ? higher system effciency ? reduce cooling requirements ? increase power density ? increase system switching frequency applications ? renewable energy ? ev battery chargers ? high voltage dc/dc converters ? switch mode power supplies package part number package marking C3M0075120K to 247-4 C3M0075120K v ds 1200 v i d @ 25?c 30 a r ds(on) 75 m ? maximum ratings (t c = 25 ?c unless otherwise specifed) symbol parameter value unit test conditions note v dsmax drain - source voltage 1200 v v gs = 0 v, i d = 100 a v gsmax gate - source voltage (dynamic) -8/+19 v ac (f >1 hz) note: 1 v gsop gate - source voltage (static) -4/+15 v static note: 2 i d continuous drain current 30 a v gs = 15 v, t c = 25?c fig. 19 19.7 v gs = 15 v, t c = 100?c i d(pulse) pulsed drain current 80 a pulse width t p limited by t jmax fig. 22 p d power dissipation 113.6 w t c =25?c, t j = 150 ?c fig. 20 t j , t stg operating junction and storage temperature -55 to +150 ?c t l solder temperature 260 ?c 1.6mm (0.063) from case for 10s note (1): when using mosfet body diode v gsmax = -4v/+19v note (2): mosfet can also safely operate at 0/+15 v 1 d tab drain 2 3 4 s s g drain (pin 1, tab) power source (pin 2) driver source (pin 3) gate (pin 4) C3M0075120K rev. a, 02-2017
2 electrical characteristics (t c = 25?c unless otherwise specifed) symbol parameter min. typ. max. unit test conditions note v (br)dss drain-source breakdown voltage 1200 v v gs = 0 v, i d = 100 a v gs(th) gate threshold voltage 1.7 2.5 4.0 v v ds = v gs , i d = 5 ma fig. 11 2.0 v v ds = v gs , i d = 5 ma, t j = 150oc i dss zero gate voltage drain current 1 100 a v ds = 1200 v, v gs = 0 v i gss gate-source leakage current 10 250 na v gs = 15 v, v ds = 0 v r ds(on) drain-source on-state resistance 75 90 m? v gs = 15 v, i d = 20 a fig. 4, 5, 6 100 v gs = 15 v, i d = 20a, t j = 150oc g fs transconductance 9.0 s v ds = 20 v, i ds = 20 a fig. 7 8.3 v ds = 20 v, i ds = 20 a, t j = 150oc c iss input capacitance 1350 pf v gs = 0 v, v ds = 1000 v f = 1 mhz v ac = 25 mv fig. 17, 18 c oss output capacitance 58 c rss reverse transfer capacitance 3 e oss c oss stored energy 33 j fig. 16 e on turn-on switching energy (body diode fwd) 330 j v ds = 800 v, v gs = -4 v/15 v, i d = 20a, r g(ext) = 0 ?, l= 156 h, t j = 150oc fig. 26, 29 e off turn-off switching energy (body diode fwd) 85 t d(on) turn-on delay time 22 ns v dd = 800 v, v gs = -4 v/15 v i d = 20 a, r g(ext) = 0 ?, timing relative to v ds inductive load fig. 27, 28 t r rise time 11 t d(off) turn-off delay time 33 t f fall time 11 r g(int) internal gate resistance 10.5 ? f = 1 mhz , v ac = 25 mv q gs gate to source charge 14 nc v ds = 800 v, v gs = -4 v/15 v i d = 20 a per iec60747-8-4 pg 21 fig. 12 q gd gate to drain charge 21 q g total gate charge 51 reverse diode characteristics (t c = 25?c unless otherwise specifed) symbol parameter typ. max. unit test conditions note v sd diode forward voltage 4.5 v v gs = -4 v, i sd = 10 a fig. 8, 9, 10 4.0 v v gs = -4 v, i sd = 10 a, t j = 150 c i s continuous diode forward current 22.4 a v gs = -4 v note 1 i s, pulse diode pulse current 80 a v gs = -4 v, pulse width t p limited by t jmax note 1 t rr reverse recover time 18 ns v gs = -4 v, i sd = 20 a, v r = 800 v dif/dt = 3600 a/s, t j = 150 c note 1 q rr reverse recovery charge 220 nc i rrm peak reverse recovery current 19 a thermal characteristics symbol parameter max. unit test conditions note r jc thermal resistance from junction to case 1.1 c/w fig. 21 r ja thermal resistance from junction to ambient 40 C3M0075120K rev. a, 02-2017
3 0 10 20 30 40 50 60 70 80 90 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 150 c tp = < 200 s v gs = 7v v gs = 15v v gs = 13v v gs = 11v v gs = 9v 0 10 20 30 40 50 60 70 80 90 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = - 55 c tp = < 200 s v gs = 7v v gs = 15v v gs = 13v v gs = 11v v gs = 9v 0 10 20 30 40 50 60 70 80 90 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 25 c tp = < 200 s v gs = 7v v gs = 15v v gs = 13v v gs = 11v v gs = 9v figure 2. output characteristics t j = 25 oc typical performance figure 5. on-resistance vs. drain current for various temperatures figure 1. output characteristics t j = -55 oc figure 3. output characteristics t j = 150 oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (p.u.) junction temperature, t j ( c) conditions: i ds = 20 a v gs = 15 v t p < 200 s 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 on resistance, r ds on (mohms) drain - source current, i ds (a) conditions: v gs = 15 v t p < 200 s t j = 150 c t j = - 55 c t j = 25 c figure 4. normalized on-resistance vs. temperature 0 20 40 60 80 100 120 140 160 180 200 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (mohms) junction temperature, t j ( c) conditions: i ds = 20 a t p < 200 s v gs = 15 v v gs = 13 v v gs = 11 v figure 6. on-resistance vs. temperature for various gate voltage C3M0075120K rev. a, 02-2017
4 typical performance figure 8. body diode characteristic at -55 oc figure 9. body diode characteristic at 25 oc 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 12 14 drain - source current, i ds (a) gate - source voltage, v gs (v) conditions: v ds = 20 v tp < 200 s t j = 150 c t j = - 55 c t j = 25 c - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 - 10 - 8 - 6 - 4 - 2 0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = - 55 c t p < 200 s v gs = - 2 v v gs = - 4 v v gs = 0 v - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 - 10 - 8 - 6 - 4 - 2 0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = 25 c t p < 200 s v gs = - 2 v v gs = - 4 v v gs = 0 v - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 - 10 - 8 - 6 - 4 - 2 0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = 150 c t p < 200 s v gs = - 2 v v gs = - 4 v v gs = 0 v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 - 50 - 25 0 25 50 75 100 125 150 threshold voltage, v th (v) junction temperature t j ( c) conditons v ds = v gs i ds = 5 ma figure 10. body diode characteristic at 150 oc - 4 0 4 8 12 16 0 10 20 30 40 50 60 gate - source voltage, v gs (v) gate charge, q g (nc) conditions: i ds = 20 a i gs = 50 ma v ds = 800 v t j = 25 c figure 7. transfer characteristic for various junction temperatures figure 11. threshold voltage vs. temperature figure 12. gate charge characteristics C3M0075120K rev. a, 02-2017
5 typical performance figure 15. 3rd quadrant characteristic at 150 oc figure 13. 3rd quadrant characteristic at -55 oc - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 - 8 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = - 55 c t p < 200 s v gs = 10 v v gs = 5 v v gs = 15 v v gs = 0 v - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 - 8 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = 25 c t p < 200 s v gs = 10 v v gs = 5 v v gs = 15 v v gs = 0 v - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 - 8 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = 150 c t p < 200 s v gs = 10 v v gs = 5 v v gs = 15 v v gs = 0 v figure 14. 3rd quadrant characteristic at 25 oc 0 5 10 15 20 25 30 35 40 0 200 400 600 800 1000 stored energy, e oss (j) drain to source voltage, v ds (v) figure 16. output capacitor stored energy figure 17. capacitances vs. drain-source voltage (0 - 200v) 1 10 100 1000 10000 0 50 100 150 200 capacitance (pf) drain - source voltage, v ds (v) c iss c oss conditions: t j = 25 c v ac = 25 mv f = 1 mhz c rss 1 10 100 1000 10000 0 200 400 600 800 1000 capacitance (pf) drain - source voltage, v ds (v) c iss c oss conditions: t j = 25 c v ac = 25 mv f = 1 mhz c rss figure 18. capacitances vs. drain-source voltage (0 - 1000v) C3M0075120K rev. a, 02-2017
6 1e - 3 10e - 3 100e - 3 1 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100e - 3 1 10 junction to case impedance, z thjc ( o c/w) time, t p (s) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse typical performance 0 5 10 15 20 25 30 35 - 55 - 30 - 5 20 45 70 95 120 145 drain - source continous current, i ds (dc) (a) case temperature, t c ( c) conditions: t j 150 c 0 20 40 60 80 100 120 - 55 - 30 - 5 20 45 70 95 120 145 maximum dissipated power, p tot (w) case temperature, t c ( c) conditions: t j 150 c 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 drain - source current, i ds (a) drain - source voltage, v ds (v) 100 s 1 ms 10 s conditions: t c = 25 c d = 0, parameter: t p 100 ms limited by r ds on figure 22. safe operating area figure 21. transient thermal impedance (junction - case) 0 100 200 300 400 500 600 0 10 20 30 40 50 switching loss (uj) drain to source current, i ds (a) e off e on e total conditions: t j = 25 c v dd = 600 v r g(ext) = 0 ? v gs = - 4v/+15 v fwd = C3M0075120K l = 156 h figure 23. clamped inductive switching energy vs. drain current (v dd = 600v) figure 24. clamped inductive switching energy vs. drain current (v dd = 800v) 0 200 400 600 800 0 10 20 30 40 50 switching loss (uj) drain to source current, i ds (a) e off e on e total conditions: t j = 25 c v dd = 800 v r g(ext) = 0 ? v gs = - 4v/+15 v fwd = C3M0075120K l = 1 56 h figure 19. continuous drain current derating vs. case temperature figure 20. maximum power dissipation derating vs. case temperature C3M0075120K rev. a, 02-2017
7 typical performance 0 200 400 600 800 1000 0 5 10 15 20 25 switching loss (uj) external gate resistor rg(ext) (ohms) e off e on e total conditions: t j = 25 c v dd = 800 v i ds = 20 a v gs = - 4v/+15 v fwd = C3M0075120K l = 156 h 0 20 40 60 80 0 5 10 15 20 25 switching time (ns) external gate resistor rg(ext) (ohms) t d(off) conditions: t j = 25 c v dd = 800 v i ds = 20 a v gs = - 4v/+15 v fwd = C3M0075120K l = 156 h t r t f t d(on) 0 100 200 300 400 500 600 0 25 50 75 100 125 150 175 switching loss (uj) junction temperature, t j ( c) e off e on e total conditions: i ds = 20 a v dd = 800 v r g(ext) = 0 ? v gs = - 4v/+15 v fwd = C3M0075120K l = 1 56 h figure 26. clamped inductive switching energy vs. temperature figure 27. switching times vs. r g(ext) figure 25. clamped inductive switching energy vs. r g(ext) figure 28. switching times defnition C3M0075120K rev. a, 02-2017
8 test circuit schematic l q 2 d.u.t q 1 v gs = - 4 v r g r g c dc v dc ks ks 2 c s c sc s d C3M0075120K rev. a, 02-2017
9 package dimensions package to-247-4l base metal section "f-f", "g-g" and "h-h" scale: none e2 e e3 e4 e1 C3M0075120K rev. a, 02-2017
10 note ; 1. all metal surfaces: tin plated,except area of cut 2. dimensioning & toleranceing confirm to asme y14.5m-1994. 3. all dimensions are in millimeters. angles are in degrees. min millimeters sym max a a1 a2 b' b b3 b4 c' c d d1 d2 e 4.83 5.21 2.29 2.54 1.91 2.16 1.07 1.28 1.07 1.33 1.07 1.60 1.07 1.50 0.55 0.65 0.55 0.68 23.30 23.60 16.25 17.65 0.95 1.25 15.75 16.13 b1 b2 2.39 2.39 2.94 2.84 b5 b6 2.39 2.39 2.69 2.64 recommended solder pad layout min millimeters sym max e1 e2 e3 e4 e n l l1 ? p q s t w x 13.10 14.15 3.68 5.10 1.00 1.90 12.38 13.43 2.54 bsc 4 17.31 17.82 3.97 4.37 3.51 3.65 5.49 6.00 6.04 6.30 17.5 ref. 3.5 ref. 4 ref. e1 5.08 bsc l2 2.35 2.65 package dimensions package to-247-4l C3M0075120K rev. a, 02-2017
11 11 related links ? spice models: http://wolfspeed.com/power/tools-and-support ? sic mosfet isolated gate driver reference design: http://wolfspeed.com/power/tools-and-support ? sic mosfet evaluation board: http://wolfspeed.com/power/tools-and-support C3M0075120K rev -, 02-2017 copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.wolfspeed.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your cree representative or from the product documentation sections of www.cree.com. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemical agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree represen - tative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems. notes

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